Edge seals for semiconductor packages

ABSTRACT

Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of the earlier U.S.Utility patent application to Gambino et al. entitled “Edge Seals forSemiconductor Packages,” application Ser. No. 16/537,149, filed Aug. 9,2019, now pending, which application is a divisional application of theearlier U.S. Utility patent application to Gambino et al. entitled “EdgeSeals for Semiconductor Packages,” application Ser. No. 15/421,505,filed Feb. 1, 2017, now issued as U.S. Pat. No. 10,431,614, thedisclosures of each of which are hereby incorporated entirely herein byreference.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to semiconductor packages.Specific implementations include as hybrid bonded three dimensionalstructures for image sensors.

2. Background

To form three dimensional structures, a hybrid bonding interface is usedincluding hybrid bonds and conductive bonds. In standard hybrid bondinginterfaces, a uniform array of vias on both wafers is used to ensureproper height for the conductive bonds.

SUMMARY

Implementations of semiconductor packages may include: a digital signalprocessor having a first side and a second side. An image sensor arraymay be included, having a first side and a second side, where the firstside of the image sensor array is coupled to the second side of thedigital signal processor through a plurality of hybrid bond interconnect(HBI) bond pads and an edge seal. An etch stop layer may be included inthe second side of the digital signal processor. One or more openingsmay extend from the second side of the image sensor array into thesecond side of the digital signal processor and to the etch stop layerin the second side of the digital signal processor. The one or moreopenings may be coated with a sealing material. The one or more openingsmay also form a second edge seal between the plurality of HBI bond padsand the edge of the digital signal processor. The edge seal may includea first metal stack included within the digital signal processor and asecond metal stack included within the image sensor array electricallycoupled together.

Implementations of semiconductor packages may include one, all, or anyof the following:

The one or more openings may be positioned outside the edge seal.

The one or more opening may be positioned inside the edge seal.

The sealing material may be one of oxynitride (ONO), silicon nitride(SiN), aluminum nitride (AlN), and any combination thereof.

The semiconductor package may further include one or more secondopenings extending from the second side of the image sensor array to thesecond metal stack included in the image sensor, the one or more secondopenings forming a third edge seal where the one or more second openingseach have a sealing material therein.

The sealing material of the one or more second openings may be one ofoxynitride (ONO), aluminum oxide (Al₂O₃), silicon nitride (SiN), hafniumdioxide (HfO₂), tantalum oxide (Ta₂O₅), and any combination thereof.

The semiconductor package may further include one or more third openingsextending from the second side of the image sensor array to the etchstop layer in the digital signal processor forming a fourth edge sealwherein the one or more third openings may be positioned one of insideor outside the edge seal.

Implementations of semiconductor packages may include: a digital signalprocessor, having a first side and a second side, the second side havingan etch stop layer. An image sensor array having a first side and asecond side may be included. The first side may have the image sensorarray mechanically and electrically coupled to the second side of thedigital signal processor through a plurality of hybrid bond interconnect(HBI) bond pads and an edge seal on an outer edge of the semiconductorpackage. A first metal stack may be included within the digital signalprocessor and a second metal stack may be included in the image sensorarray, wherein the first metal stack is electrically coupled with thesecond metal stack through one of the plurality of HBI bond pads. Thesemiconductor package may include one or more first openings, where theone or more first openings may extend into the second side of the imagesensor array to the etch stop layer in the digital signal processor. Theone or more first openings may form a second edge seal. One or moresecond openings may extend into the second side of the image sensorarray to the second metal stack included in the image sensor. The one ormore second openings may form a third edge seal. The one or more firstopenings and the one or more second openings may each have a sealingmaterial therein.

Implementations of semiconductor packages may include one, all, or anyof the following:

The sealing material on the one or more first openings may be one ofoxynitride (ONO), silicon nitride (SiN), aluminum nitride (AlN), and anycombination thereof.

The sealing material on the one or more second openings may be one ofoxynitride (ONO), aluminum oxide (Al₂O₃), silicon nitride (SiN), hafniumdioxide (HfO₂), tantalum oxide (Ta₂O₅), and any combination thereof.

The semiconductor package may further include one or more third openingsextending into the second side of the image sensor array to the etchstop layer in the digital signal processor thereby forming a fourth edgeseal. The one or more third openings may be positioned one of inside oroutside the edge seal.

Implementations of semiconductor packages may include: a digital signalprocessor, having a first side and a second side. An image sensor arraymay be included having a first side and a second side, the first side ofthe image sensor array mechanically and electrically coupled to thesecond side of the digital signal processor through one or more hybridbond interconnect (HBI) bond pads and an edge seal. A first metal stackmay be included within the digital signal processor. A second metalstack may be included in the image sensor array. A via bar may beincluded having a width that is smaller than a width of the HBI bondpads. The via bar may electrically couple the first metal stack and thesecond metal stack. The via bar may form an additional seal inside theedge seal.

Implementations of semiconductor packages may include one, all, or anyof the following:

The additional edge seal formed by the via bar may be continuous.

The additional edge seal formed by the via bar may include spacestherein.

The via bar may include copper.

The semiconductor package may further include one or more firstopenings, the one or more first openings extending into the second sideof the image sensor array to an etch stop layer in the digital signalprocessor. The one or more openings may be located between the edge sealand the plurality of HBI bond pads. The one or more first openings mayform a second edge seal. The one or more first openings may include asealing material.

The semiconductor package may further include one or more secondopenings extending into the second side of the image sensor array to thesecond metal stack included in the image sensor. The one or more secondopenings may form a third edge seal. The one or more second openings mayinclude a sealing material.

The sealing material on the one or more first openings may be one ofoxynitride (ONO), silicon nitride (SiN), aluminum nitride (AlN), and anycombination thereof.

The sealing material on the one or more second openings may be one ofoxynitride (ONO), aluminum oxide (Al₂O₃), silicon nitride (SiN), hafniumdioxide (HfO₂), tantalum oxide (Ta₂O₅), and any combination thereof.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1 is a cross sectional view of an implementation of a semiconductorpackage having a first opening to the right of the edge seal;

FIG. 2 is a top view of implementations of four semiconductor packagesas seen in FIG. 1 , before singulation;

FIG. 3 is a cross sectional view of an implementation of a semiconductorpackage having a first opening and a second opening as described herein;

FIG. 4 is a top view of implementations of four semiconductor packagesas seen in FIG. 3 , before singulation;

FIG. 5 is a cross sectional view of an implementation of a semiconductorpackage having an additional seal formed through a narrow via bar;

FIG. 6 is a top view of an additional seal formed through a narrow viabar;

FIG. 7 is a top view of an image sensor array having an additional edgeseal formed through a narrow via bar; and

FIG. 8 is a cross sectional view of another implementation of asemiconductor package as described herein.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intended semiconductorpackages will become apparent for use with particular implementationsfrom this disclosure. Accordingly, for example, although particularimplementations are disclosed, such implementations and implementingcomponents may comprise any shape, size, style, type, model, version,measurement, concentration, material, quantity, method element, step,and/or the like as is known in the art for such semiconductor packagesand implementing components and methods, consistent with the intendedoperation and methods.

Referring to FIG. 1 , a semiconductor package is illustrated 2. Thesemiconductor package includes a digital signal processor 4 having afirst side and a second side and an image sensor array 6 having a firstside and a second side. The second side of the digital signal processor4 is coupled to the first side of the image sensor array 6 through ahybrid bond interconnect (HBI) process. The HBI process uses a hybridbond, the hybrid bond including conductive bonds between conductorregions (HBI bond pads) of two wafers and hybrid bonds between insulatorregions of two wafers. The hybrid bonding allows for electricalconnections to be formed and forms a mechanically stable structurebetween the two wafers. In some implementations, the HBI bond pads maybe metal such as copper, nickel, gold, or other suitable metals known inthe art. In other implementations, the HBI bond pads may be made ofother non-metal conductive material. In this particular implementation,the HBI bond pads are copper (Cu) forming Cu—Cu bonds between the twowafers 4 and 6 and oxide-oxide bonds formed between the wafer material.The insulator regions of the wafer may include silicon dioxide (SiO₂),other suitable dielectric materials, or a combination thereof.

The first side of the image sensor array 6 is coupled to the second sideof the digital signal processor 4 through a plurality of HBI bond pads 8and an edge seal 10. The edge seal 10, in this implementation, includesa first metal stack 12 within the digital signal processor 4 bonded to asecond metal stack 14 within in the image sensor array 6. The firstmetal stack 12 is bonded to the second metal stack 14 through HBIbonding pads 16. In this particular implementation, a first opening 18is formed to the right of the edge seal 10. In various implementations,semiconductor packages may have one or more first openings 18. In theimplementation illustrated, the first opening 18 extends from the secondside of the image sensor array 6 to the second side of the digitalsignal processor 4. The first opening 18 extends to/into the etch stoplayer 20 in the second side of the digital signal processor 4. Invarious implementations, the first opening 18 may be coated with asealing material 22 and may form a second edge seal between theplurality of HBI bond pads 8 and the edge seal 10. In thisimplementation, the semiconductor package is coated with ananti-reflective coating 24. The anti-reflective coating 24 may be thesame material as the sealing material 22. In various implementations,the sealing material may include one of oxynitride (ONO), siliconnitride (SiN), aluminum nitride (AlN), any combination thereof, or anyother suitable material known disclosed herein or known in the art forsealing a semiconductor opening's sidewalls. In other implementations,the one or more first openings may be positioned between the active areaof the semiconductor package and the edge seal 10. In still otherimplementations, the one or more first openings may also be positionedbetween the edge seal 10 and the edge of the semiconductor package asshown in FIG. 1 .

Referring to FIG. 2 , a top view of four semiconductor packages 2 isillustrated. This view shows a portion of a pre-singulated image sensorarray wafer 28 having four discrete digital signal processor chips 30bonded thereto forming four semiconductor packages 2. As a final step ofmanufacturing all material in the saw street intersection 32 is removedduring singulation via sawing.

As previously described, hybrid bonding allows for formation of threedimensional (3D) structures with a fine pitch (<10 μm). However, thelayout of the HBI bond pads is very restrictive as conventionally auniform array of vias is required across both wafers to ensure that thecopper (or other metal) height is well controlled. For example, too muchdishing in high pattern density regions can cause incomplete bonding. Inconventional HBI bond pad layouts, there may be gaps in the edge sealring that may allow moisture to diffuse into the active region of thedie causing oxidation of Cu vias and reliability failures of the device.Referring back to FIG. 2 , the one or more first openings 18 may bepositioned between the plurality of HBI bond pads 8 and the edge seal 10to create a second edge seal for the semiconductor package. The one ormore first openings 18 may be continuous forming a trench-like structureto form a second edge seal. In other implementations, the one or morefirst openings 18 may be discrete openings sealing particular areas ofthe semiconductor packages. As previously described, the second edgeseal 18 may be positioned on the outside the edge seal meaning on theouter edge of the semiconductor package or may be positioned inside theedge seal meaning between the edge seal and the active area of the die.

Referring now to FIG. 3 , another implementation of a semiconductorpackage 40 is illustrated. In this implementation, a second side of adigital signal processor 42 is electrically and mechanically coupled toa first side of an image sensor array 44. The second side of the imagesensor array 44 is coated with an anti-reflective coating (ARC) 46. Anetch stop layer 48 is included in the second side of the digital signalprocessor 42. Similar to the implementation previously described, thewafers are bonded through a plurality of HBI bond pads 50 and an edgeseal 52. The edge seal 52 includes a first metal stack 54 within thedigital signal processor 42 and a second metal stack 56 within the imagesensor array 44. In this implementation, one or more first openings 58are positioned between the active area of the die and the edge seal 52.The one or more first openings 58 form a second edge seal protecting theactive area of the die. In this particular implementation, one or moresecond openings 60 extend from the second side of the image sensor array44 to the second metal stack 56 within the image sensor array 44 forminga third edge seal. The one or more second openings 60 are coated with asealing material 62 therein. The sealing material may include ONO,aluminum oxide (Al₂O₃), SiN, hafnium dioxide (HfO₂), tantalum oxide(Ta₂O₅), any combination thereof, or any other suitable materialdisclosed herein or known in the art.

Referring to FIG. 4 , a top view of a semiconductor package 64 havingone or more first openings and one or more second openings isillustrated. In this view, one or more second openings 60 are shownforming a third edge seal next to/adjacent to the edge seal formed bythe metal stacks as described above. In this particular implementation,the second edge seal 58 formed by the one or more first openings islocated between the edge seal 52 and the active area of the die. Inadditional implementations, one or more third openings may extend intothe second side of the image sensor array to the etch stop layer in thedigital signal processor forming a fourth edge seal. The one or morethird openings may be positioned inside (on the active region side) oroutside (on the scribe line region side) of the edge seal of thesemiconductor package.

Referring now to FIG. 5 , a cross sectional view of an additionalimplementation of a semiconductor package 72 is illustrated. A secondside of a digital sensor processor 74 is coupled with a first side of animage sensor array 76 through a plurality of HBI bond pads 78 and anedge seal 80. A first metal stack 82 is included within the digitalsignal processor 74 and a second metal stack 84 is included within theimage sensor array 76. The first metal stack 82 and the second metalstack 84 are electrically coupled through a via bar 86 having a widththat is smaller than a width of the plurality of HBI bond pads 78. Inthe implementation illustrated, the width of the via bar 86 isapproximately 25-75% smaller than the width of the HBI bond pads 78. Thevia bar 86 forms an additional seal 88 inside the edge seal 80. Theadditional seal 88 formed by the via bar 86 may be continuous or it mayhave spaces therein when viewed from above the via bar 86. The via barmay include Cu, nickel, gold, or any suitable material known in the art.

Referring to FIG. 6 and FIG. 7 , a top view of the semiconductor package72 from FIG. 5 is illustrated. The additional seal 88 formed by the viabar is located inside the edge seal 80 formed by the metal stacks.Because the additional seal 88 formed by the via bar is located at thedie corner, it may facilitate bonding between the digital signalprocessor and the image sensor array. Because the corner of the die isbonded all the way around the corner at the via bar, the risk ofchipping and other moisture ingress during the sawing process may bereduced. Furthermore, the additional seal 88 may facilitate localpattern density compensation to control Cu dishing across all Cuinterfaces during chemical mechanical polishing (CMP).

In various implementations, the additional seal 88 may be used incombination with of the one or more first opening implementations andthe one or more second opening implementations to form additional edgeseals as desired. In other implementations, the additional seal 88 maybe used by itself in wafer bonding implementations disclosed herein,without any of the one or more first opening implementations and/or oneor more second opening implementations.

Referring now to FIG. 8 , another implementation of semiconductorpackage 96 is illustrated. A second side of a digital sensor processor98 is coupled with a first side of an image sensor array 100 through aplurality of HBI bond pads 102 and an edge seal 104. A first metal stack106 is included within the digital signal processor 98 and a secondmetal stack 108 is included within the image sensor array 100. In thisimplementation, the HBI bonds 102 are completely separated from the edgeseal 104. This implementation may reduce stress between the edge seal104 and the HBI 102. This implementation may be used by itself as adifferent edge seal implementation or in combination with any of theother previously described opening implementations and/or via barimplementations. A wide variety of possible applications for edge sealslike those illustrated in FIG. 8 may be appreciated by those of ordinaryskill in the art.

In places where the description above refers to particularimplementations of semiconductor packages and implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to othersemiconductor packages.

What is claimed is:
 1. A semiconductor package comprising: a digitalsignal processor, comprising a first side and a second side; an imagesensor array comprising a first side and a second side, the first sideof the image sensor array mechanically and electrically coupled to thesecond side of the digital signal processor through a plurality ofhybrid bond interconnect (HBI) bond pads and an edge seal; a first metalstack comprised within the digital signal processor; a second metalstack comprised within the image sensor array; and a via bar having awidth that is smaller than a width of the plurality of HBI bond pads,the via bar electrically coupling the first metal stack and the secondmetal stack; wherein the via bar forms an additional seal inside theedge seal; and wherein the width of the via bar is less than a widestwidth of the first metal stack and is less than a widest width of thesecond metal stack.
 2. The semiconductor package of claim 1, wherein theadditional seal formed by the via bar is continuous.
 3. Thesemiconductor package of claim 1, wherein the additional seal formed bythe via bar comprises spaces therein.
 4. The semiconductor package ofclaim 1, wherein the via bar comprises copper.
 5. The semiconductorpackage of claim 1, further comprising one or more first openings, theone or more first openings extending into the second side of the imagesensor array to an etch stop layer in the digital signal processor, theone or more first openings located between the edge seal and theplurality of HBI bond pads, the one or more first openings forming asecond edge seal, wherein the one or more first openings each comprisesealing material.
 6. The semiconductor package of claim 5, furthercomprising one or more second openings extending into the second side ofthe image sensor array to the second metal stack comprised in the imagesensor array, the one or more second openings forming a third edge seal,wherein the one or more second openings comprise sealing material. 7.The semiconductor package of claim 5, wherein the sealing material onthe one or more first openings is one of oxynitride (ONO), siliconnitride (SiN), aluminum nitride (AlN), and any combination thereof. 8.The semiconductor package of claim 6, wherein the sealing material onthe one or more second openings is one of oxynitride (ONO), aluminumoxide (Al₂O₃), silicon nitride (SiN), hafnium dioxide (HfO₂), tantalumoxide (Ta₂O₅), and any combination thereof.
 9. A semiconductor packagecomprising: a digital signal processor, comprising a first side and asecond side; an image sensor array comprising a first side and a secondside; a first plurality of hybrid bond interconnect (HBI) bond padscomprised in the digital signal processor; a second plurality of HBIbond pads comprised in the image sensor array; an edge seal comprised inthe image sensor array and the digital signal processor; a first metalstack comprised within the digital signal processor; a second metalstack comprised within the image sensor array; and a via bar having awidth that is smaller than a width of each HBI bond pad of the firstplurality of HBI bond pads and the second plurality of HBI bond pads;wherein the digital image signal processor is coupled to the imagesensor array through the first plurality of HBI bond pads and the secondplurality of HBI bond pads; wherein the via bar electrically couples thefirst metal stack and the second metal stack; wherein the via bar formsan additional seal inside the edge seal; and wherein the width of thevia bar is less than a widest width of the first metal stack and is lessthan a widest width of the second metal stack.
 10. The semiconductorpackage of claim 9, wherein the additional seal formed by the via bar iscontinuous.
 11. The semiconductor package of claim 9, wherein theadditional seal formed by the via bar comprises spaces therein.
 12. Thesemiconductor package of claim 9, wherein the via bar comprises copper.13. The semiconductor package of claim 9, further comprising one or morefirst openings, the one or more first openings extending into the secondside of the image sensor array to an etch stop layer in the digitalsignal processor, the one or more first openings located between theedge seal and the second plurality of HBI bond pads, the one or morefirst openings forming a second edge seal, wherein the one or more firstopenings each comprise sealing material.
 14. The semiconductor packageof claim 13, further comprising one or more second openings extendinginto the second side of the image sensor array to the second metal stackcomprised in the image sensor array, the one or more second openingsforming a third edge seal, wherein the one or more second openingscomprise sealing material.
 15. The semiconductor package of claim 13,wherein the sealing material on the one or more first openings is one ofoxynitride (ONO), silicon nitride (SiN), aluminum nitride (AlN), and anycombination thereof.
 16. A semiconductor package comprising: a digitalsignal processor, comprising a first side and a second side; an imagesensor array comprising a first side and a second side, the first sideof the image sensor array mechanically and electrically coupled to thesecond side of the digital signal processor through a plurality ofhybrid bond interconnect (HBI) bond pads and an edge seal; a first metalstack comprised within the digital signal processor; a second metalstack comprised within the image sensor array; and a via barelectrically coupling the first metal stack and the second metal stack;wherein the via bar forms an additional seal inside the edge seal; andwherein the width of the via bar is less than a widest width of thefirst metal stack and is less than a widest width of the second metalstack.
 17. The semiconductor package of claim 16, wherein the additionalseal formed by the via bar is continuous.
 18. The semiconductor packageof claim 16, wherein the additional seal formed by the via bar comprisesspaces therein.
 19. The semiconductor package of claim 16, wherein thevia bar comprises copper.
 20. The semiconductor package of claim 16,further comprising one or more first openings, the one or more firstopenings extending into the second side of the image sensor array to anetch stop layer in the digital signal processor, the one or more firstopenings located between the edge seal and the plurality of HBI bondpads, the one or more first openings forming a second edge seal, whereinthe one or more first openings each comprise sealing material.